Semester | Fall Semester 2024 |
---|---|
Lecturers | C. W. Schneider and M. Trassin |
Periodicity | yearly course |
ECTS Points | 5 ECTS Points can be obtained |
Time | Tue 15:45-17:30; Thu 09:45-11:30 |
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Location | Tue: HCI D8; Thu: HCI D2 |
Lecture Notes | are available |
Date 2024 | Topic | Lecturer |
---|---|---|
Sept. 17 | General Introduction | Trassin/Schneider |
Sept. 19 | Fundamentals I | C. W. Schneider |
Sept. 24 | Fundamentals II (Nucleation) | C. W. Schneider |
Sept. 26 | Fundamentals III (Epitaxy) | C. W. Schneider |
Oct. 01 | Growth mode & PVD - sputtering | M. Trassin |
Oct. 03 | RF sputtering; evap/MBE | M. Trassin |
Oct. 08 | PVD - PLD | Schneider/Yan |
Oct. 10 | CVD | C. W. Schneider |
Oct. 15 | Lab visit | Trassin/Yan |
Oct. 17 | Lab visit | Trassin/Yan |
Oct. 22 | Lab visit | Trassin/Yan |
Oct. 24 | Non-Vacuum technique | Schneider/Yan |
Oct. 29 | Non-Vac. technique (Sol Gel) / Struct. charact XRD | Schneider/Trassin |
Oct. 31 | RHEED, AFM, Ferroic I | M. Trassin |
Nov. 05 | Ferroic II | M. Trassin |
Nov. 07 | MF type I | M. Trassin |
Nov. 12 | TF characterization I | C. W. Schneider |
Nov. 14 | Probing FE II | M. Trassin |
Nov. 19 | MF II and probing FE I | M. Trassin |
Nov. 21 | TF characterization II | C. W. Schneider |
Nov. 26 | TF characterization III | C. W. Schneider |
Nov. 28 | TF characterization IV | C. W. Schneider |
Dec. 03 | TF characterization V | C. W. Schneider |
Dec. 05 | Microfabrication | C. W. Schneider |
Dec. 10 | Device concepts I | M. Trassin |
Dec. 12 | Device concepts II | M. Trassin |
Dec. 17 | Q&A | Trassin/Schneider |
Dec. 19 | written exam, Loc: HIL E6; Time: 9:45-11:30 | Trassin/Schneider/Yan |
Exam:
The written exam will be in English lasting 90 min. No accessories are allowed.
Planned are:
- Possible visit to PSI with a lab tour, including the large facilities (synchrotron-SLS)-on request