A novel super-resolution X-ray microscope developed by a team of researchers from the Paul Scherrer Institut (PSI) and EPFL in Switzerland combines the high penetration power of x-rays with high spatial resolution, making it possible for the first time to shed light on the detailed interior composition of semiconductor devices and cellular structures.
The first super-resolution images from this novel microscope will be published online July 18, 2008 in the journal Science.
“Researchers have been working on such super-resolution microscopy concepts for electrons and x-rays for many years,” says EPFL Professor and team leader Franz Pfeiffer. “Only the construction of a dedicated multi-million Swiss-franc instrument at PSI's Swiss Light Source allowed us to achieve the stability that is necessary to implement our novel method in practice.”
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Facility: SLS
Paul Scherrer Institut, 5232 Villigen PSI, Switzerland,
Email: pierre.thibault@psi.ch
Prof. Dr. Franz Pfeiffer, Research Group Leader
Paul Scherrer Institut & EPFL, 5232 Villigen PSI, Switzerland
Email: franz.pfeiffer@epfl.ch
Reference
High-Resolution Scanning X-Ray Diffraction Microscopy, by P. Thibault et al., Science, Vol 321 (2008).Contacts
Dr. Pierre Thibault, Postdoctoral ResearcherPaul Scherrer Institut, 5232 Villigen PSI, Switzerland,
Email: pierre.thibault@psi.ch
Prof. Dr. Franz Pfeiffer, Research Group Leader
Paul Scherrer Institut & EPFL, 5232 Villigen PSI, Switzerland
Email: franz.pfeiffer@epfl.ch