At the Laboratory for Micro and Nanotechnology (LMN), and in collaboration with the Advanced Power Semiconductor Laboratory (APS) at ETH Zürich, we are involved in the development and optimization of all the necessary steps for the fabrication of MOSFET transistors. This allows us to study and improve the different processes at the material level (using morphological and chemical analysis at the nano scale based on the unique, mostly synchrotron based techniques available at PSI, such as X-ray photoemission spectroscopy XPS, atomic force microscopy AFM, Trasmission and Scanning Electron Microscopies, TEM and SEM) and on the electrical level, extracting properties such as channel mobility and interface defectivity as function of the fabrication processes.
Fig. 1: (a) Transconductance for a lateral SiC MOSFET as shown in the inset, VSD = 0.5V. (b) HR-TEM z-contrast image of the SiO2 /SiC Interface. (c) Band structure of 4H-SiC, buried under a 2 nm layer of SiO2.
A significant part of our research is embedded in the “Swiss Transformer” project, funded by the Swiss National Science Foundation under the NRP 70 program.